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OSI Optoelectronics PIN-UDT-455, 970nm Infrared Photodetector Amplifier, Through Hole TO-5 package

OSI Optoelectronics PIN-UDT-455, 970nm Infrared Photodetector Amplifier, Through Hole TO-5 package, Peak Photo Sensitivity: 0.65A/W, Height: 6.6mm, Spectral Range of Sensitivity: 200 → 1100 nm, 350 → 1100 nm

GBP 53.96

1

OSI Optoelectronics PIN-UDT-455, 970nm Infrared Photodetector Amplifier, Through Hole TO-5 package

OSI Optoelectronics PIN-UDT-455, 970nm Infrared Photodetector Amplifier, Through Hole TO-5 package, Peak Photo Sensitivity: 0.65A/W, Height: 6.6mm, Spectral Range of Sensitivity: 200 → 1100 nm, 350 → 1100 nm

GBP 51.17

1

OSI Optoelectronics, UV-035EQ UV Si Photodiode, Through Hole TO-8

OSI Optoelectronics UV Si Photodiode, Through Hole TO-8, Spectrum(s) Detected: Ultraviolet, Wavelength of Peak Sensitivity: 720nm, Height: 5.21mm, Diameter: 13.97mm, Peak Photo Sensitivity: 0.14A/W, Polarity: Reverse, MPN: UV-035EQ

GBP 44.58

1

OSI Optoelectronics, UV-035EQ UV Si Photodiode, Through Hole TO-8

OSI Optoelectronics UV Si Photodiode, Through Hole TO-8, Spectrum(s) Detected: Ultraviolet, Wavelength of Peak Sensitivity: 720nm, Height: 5.21mm, Diameter: 13.97mm, Peak Photo Sensitivity: 0.14A/W, Polarity: Reverse, MPN: UV-035EQ

GBP 47.70

1

OSI Optoelectronics, UV-035DQC UV Si Photodiode, Through Hole Ceramic

OSI Optoelectronics UV Si Photodiode, Through Hole Ceramic, Spectrum(s) Detected: Ultraviolet, Wavelength of Peak Sensitivity: 980nm, Number of Pins: 2, Length: 0.4in, Height: 0.08in, Peak Photo Sensitivity: 0.5A/W, Polarity: Reverse, Typical Rise Time: 1µs, MPN: UV-035DQC

GBP 78.43

1

OSI Optoelectronics, UV-035DQC UV Si Photodiode, Through Hole Ceramic

OSI Optoelectronics UV Si Photodiode, Through Hole Ceramic, Spectrum(s) Detected: Ultraviolet, Wavelength of Peak Sensitivity: 980nm, Number of Pins: 2, Length: 0.4in, Height: 0.08in, Peak Photo Sensitivity: 0.5A/W, Polarity: Reverse, Typical Rise Time: 1µs, MPN: UV-035DQC

GBP 73.45

1

OSI Optoelectronics, FCI-INGAAS-120L-FC InGaAs Photodiode, Through Hole

OSI Optoelectronics InGaAs Photodiode, Through Hole, Wavelength of Peak Sensitivity: 1550nm, Number of Pins: 3, Minimum Wavelength Detected: 900nm, Maximum Wavelength Detected: 1700nm, Height: 19.2mm, Diameter: 5.07mm, Peak Photo Sensitivity: 0.95A/W, Polarity: Forward, Reverse, MPN: FCI-INGAAS-120L-FC

GBP 65.80

1

OSI Optoelectronics, FCI-InGaAs-120L-FC InGaAs Photodiode, Through Hole

OSI Optoelectronics InGaAs Photodiode, Through Hole, Wavelength of Peak Sensitivity: 1550nm, Number of Pins: 3, Minimum Wavelength Detected: 900nm, Maximum Wavelength Detected: 1700nm, Height: 19.2mm, Diameter: 5.07mm, Peak Photo Sensitivity: 0.95A/W, Polarity: Forward, Reverse, MPN: FCI-InGaAs-120L-FC

GBP 70.23

1

OSI Optoelectronics, APD05-8-150-T52L IR Si Photodiode, Through Hole TO-52

OSI Optoelectronics IR Si Photodiode, Through Hole TO-52, Spectrum(s) Detected: Infrared, Wavelength of Peak Sensitivity: 800nm, Number of Pins: 3, Minimum Wavelength Detected: 600nm, Height: 3.8mm, Diameter: 5.4mm, Peak Photo Sensitivity: 50A/W, Polarity: Reverse, MPN: APD05-8-150-T52L

GBP 70.33

1

OSI Optoelectronics, APD15-8-150-TO5 IR Si Photodiode, Through Hole TO-5

OSI Optoelectronics IR Si Photodiode, Through Hole TO-5, Spectrum(s) Detected: Infrared, Wavelength of Peak Sensitivity: 800nm, Number of Pins: 3, Minimum Wavelength Detected: 600nm, Height: 4.14mm, Diameter: 9.2mm, Peak Photo Sensitivity: 50A/W, Polarity: Reverse, MPN: APD15-8-150-TO5

GBP 75.14

1

OSI Optoelectronics, APD05-8-150-T52L IR Si Photodiode, Through Hole TO-52

OSI Optoelectronics IR Si Photodiode, Through Hole TO-52, Spectrum(s) Detected: Infrared, Wavelength of Peak Sensitivity: 800nm, Number of Pins: 3, Minimum Wavelength Detected: 600nm, Height: 3.8mm, Diameter: 5.4mm, Peak Photo Sensitivity: 50A/W, Polarity: Reverse, MPN: APD05-8-150-T52L

GBP 75.21

1

OSI Optoelectronics, APD10-8-150-T52 IR Si Photodiode, Through Hole TO-52

OSI Optoelectronics IR Si Photodiode, Through Hole TO-52, Spectrum(s) Detected: Infrared, Wavelength of Peak Sensitivity: 800nm, Number of Pins: 3, Minimum Wavelength Detected: 600nm, Height: 3.25mm, Diameter: 5.4mm, Peak Photo Sensitivity: 50A/W, Polarity: Reverse, MPN: APD10-8-150-T52

GBP 87.45

1

OSI Optoelectronics, APD15-8-150-TO5 IR Si Photodiode, Through Hole TO-5

OSI Optoelectronics IR Si Photodiode, Through Hole TO-5, Spectrum(s) Detected: Infrared, Wavelength of Peak Sensitivity: 800nm, Number of Pins: 3, Minimum Wavelength Detected: 600nm, Height: 4.14mm, Diameter: 9.2mm, Peak Photo Sensitivity: 50A/W, Polarity: Reverse, MPN: APD15-8-150-TO5

GBP 80.23

1

OSI Optoelectronics, PIN-10DP IR Si Photodiode, Surface Mount BNC

OSI Optoelectronics IR Si Photodiode, Surface Mount BNC, Spectrum(s) Detected: Infrared, Wavelength of Peak Sensitivity: 970nm, Number of Pins: 1, Minimum Wavelength Detected: 350nm, Maximum Wavelength Detected: 1100nm, Height: 1.03in, Diameter: 24.64mm, Peak Photo Sensitivity: 0.6A/W, Polarity: Reverse, Typical Rise Time: 1000ns, MPN: PIN-10DP

GBP 83.61

1

OSI Optoelectronics, FCI-INGAAS-1000 IR InGaAs Photodiode, Through Hole TO-46, TO-5

OSI Optoelectronics IR InGaAs Photodiode, Through Hole TO-46, TO-5, Spectrum(s) Detected: Infrared, Wavelength of Peak Sensitivity: 1550nm, Number of Pins: 2, Minimum Wavelength Detected: 900nm, Maximum Wavelength Detected: 1700nm, Height: 3.81mm, Diameter: 5.4mm, Peak Photo Sensitivity: 0.95A/W, Polarity: Reverse, MPN: FCI-INGAAS-1000

GBP 63.59

1

OSI Optoelectronics, FCI-InGaAs-1000 IR InGaAs Photodiode, Through Hole TO-46, TO-5

OSI Optoelectronics IR InGaAs Photodiode, Through Hole TO-46, TO-5, Spectrum(s) Detected: Infrared, Wavelength of Peak Sensitivity: 1550nm, Number of Pins: 2, Minimum Wavelength Detected: 900nm, Maximum Wavelength Detected: 1700nm, Height: 3.81mm, Diameter: 5.4mm, Peak Photo Sensitivity: 0.95A/W, Polarity: Reverse, MPN: FCI-InGaAs-1000

GBP 68.01

1

OSI Optoelectronics, OSD60-5T IR Si Photodiode, Through Hole TO-8

OSI Optoelectronics IR Si Photodiode, Through Hole TO-8, Spectrum(s) Detected: Infrared, Wavelength of Peak Sensitivity: 436nm, Minimum Wavelength Detected: 350nm, Maximum Wavelength Detected: 1100nm, Height: 0.17in, Diameter: 13.97mm, Peak Photo Sensitivity: 0.21A/W, Polarity: Reverse, Series: OSD, Typical Rise Time: 30µs, MPN: OSD60-5T

GBP 83.94

1

OSI Optoelectronics, PIN-44D IR Si Photodiode, Through Hole TO-8

OSI Optoelectronics IR Si Photodiode, Through Hole TO-8, Spectrum(s) Detected: Infrared, Wavelength of Peak Sensitivity: 970nm, Number of Pins: 2, Minimum Wavelength Detected: 350nm, Maximum Wavelength Detected: 1100nm, Height: 0.205in, Diameter: 13.97mm, Peak Photo Sensitivity: 0.65A/W, Polarity: Reverse, Typical Rise Time: 24ns, MPN: PIN-44D

GBP 44.42

1

OSI Optoelectronics, PIN-44DP IR Si Photodiode, Through Hole TO-8

OSI Optoelectronics IR Si Photodiode, Through Hole TO-8, Spectrum(s) Detected: Infrared, Wavelength of Peak Sensitivity: 970nm, Number of Pins: 2, Minimum Wavelength Detected: 350nm, Maximum Wavelength Detected: 1100nm, Height: 0.205in, Diameter: 13.97mm, Peak Photo Sensitivity: 0.6A/W, Polarity: Reverse, Typical Rise Time: 475ns, MPN: PIN-44DP

GBP 44.42

1

OSI Optoelectronics, OSD60-0 IR Si Photodiode, Through Hole TO-8

OSI Optoelectronics IR Si Photodiode, Through Hole TO-8, Spectrum(s) Detected: Infrared, Wavelength of Peak Sensitivity: 900nm, Number of Pins: 3, Minimum Wavelength Detected: 350nm, Maximum Wavelength Detected: 1100nm, Height: 0.17in, Diameter: 13.97mm, Peak Photo Sensitivity: 0.54A/W, Polarity: Reverse, Series: OSD, Typical Rise Time: 14ns, MPN: OSD60-0

GBP 71.86

1

OSI Optoelectronics, OSD60-0 IR Si Photodiode, Through Hole TO-8

OSI Optoelectronics IR Si Photodiode, Through Hole TO-8, Spectrum(s) Detected: Infrared, Wavelength of Peak Sensitivity: 900nm, Number of Pins: 3, Minimum Wavelength Detected: 350nm, Maximum Wavelength Detected: 1100nm, Height: 0.17in, Diameter: 13.97mm, Peak Photo Sensitivity: 0.54A/W, Polarity: Reverse, Series: OSD, Typical Rise Time: 14ns, MPN: OSD60-0

GBP 67.29

1

OSI Optoelectronics FCI-H250G-InGaAs-70, 1650nm Photodetector Amplifier, Through Hole ATM, Fibre Channel, Gigabit

OSI Optoelectronics FCI-H250G-InGaAs-70, 1650nm Photodetector Amplifier, Through Hole ATM, Fibre Channel, Gigabit, Dimensions: 5.4 Dia. x 2.65mm, Application: ATM, Fibre Channel, Gigabit Ethernet, High Speed Optical Communication, Package Type: TO-46, Width: 5.4 Dia.mm, Spectral Range of Sensitivity: 1100 → 1650 nm

GBP 50.67

1

OSI Optoelectronics FCI-H125G-InGaAs-70, 1650nm Photodetector Amplifier, Through Hole ATM, Fibre Channel, Gigabit

OSI Optoelectronics FCI-H125G-InGaAs-70, 1650nm Photodetector Amplifier, Through Hole ATM, Fibre Channel, Gigabit, Dimensions: 5.4 Dia. x 3.75mm, Application: ATM, Fibre Channel, Gigabit Ethernet, High Speed Optical Communication, Package Type: TO-46, Width: 5.4 Dia.mm, Spectral Range of Sensitivity: 1100 → 1650 nm

GBP 69.93

1

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OSI Optoelectronics PIN-UDT-455, 970nm Infrared Photodetector Amplifier, Through Hole TO-5 package

OSI Optoelectronics PIN-UDT-455, 970nm Infrared Photodetector Amplifier, Through Hole TO-5 package

OSI Optoelectronics, UV-035EQ UV Si Photodiode, Through Hole TO-8

OSI Optoelectronics, UV-035EQ UV Si Photodiode, Through Hole TO-8

OSI Optoelectronics, UV-035DQC UV Si Photodiode, Through Hole Ceramic

OSI Optoelectronics, UV-035DQC UV Si Photodiode, Through Hole Ceramic

OSI Optoelectronics, FCI-INGAAS-120L-FC InGaAs Photodiode, Through Hole

OSI Optoelectronics, FCI-InGaAs-120L-FC InGaAs Photodiode, Through Hole

OSI Optoelectronics, APD05-8-150-T52L IR Si Photodiode, Through Hole TO-52

OSI Optoelectronics, APD15-8-150-TO5 IR Si Photodiode, Through Hole TO-5

OSI Optoelectronics, APD05-8-150-T52L IR Si Photodiode, Through Hole TO-52

OSI Optoelectronics, APD10-8-150-T52 IR Si Photodiode, Through Hole TO-52

OSI Optoelectronics, APD15-8-150-TO5 IR Si Photodiode, Through Hole TO-5

OSI Optoelectronics, PIN-10DP IR Si Photodiode, Surface Mount BNC

OSI Optoelectronics, FCI-INGAAS-1000 IR InGaAs Photodiode, Through Hole TO-46, TO-5

OSI Optoelectronics, FCI-InGaAs-1000 IR InGaAs Photodiode, Through Hole TO-46, TO-5

OSI Optoelectronics, OSD60-5T IR Si Photodiode, Through Hole TO-8

OSI Optoelectronics, PIN-44D IR Si Photodiode, Through Hole TO-8

OSI Optoelectronics, PIN-44DP IR Si Photodiode, Through Hole TO-8

OSI Optoelectronics, OSD60-0 IR Si Photodiode, Through Hole TO-8

OSI Optoelectronics, OSD60-0 IR Si Photodiode, Through Hole TO-8

OSI Optoelectronics FCI-H250G-InGaAs-70, 1650nm Photodetector Amplifier, Through Hole ATM, Fibre Channel, Gigabit

OSI Optoelectronics FCI-H125G-InGaAs-70, 1650nm Photodetector Amplifier, Through Hole ATM, Fibre Channel, Gigabit

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