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STMicroelectronics STM32WB55RGV6, Wireless System On Chip SOC 68-Pin VFQFPN

STMicroelectronics STM32WB55RGV6, Wireless System On Chip SOC 68-Pin VFQFPN, Processing Unit: Bluetooth, Mounting Type: Surface Mount, Dimensions: 8.15 x 8.15 x 0.95mm, Length: 8.15mm, Maximum Operating Supply Voltage: 3.6 V, Maximum Operating Temperature: +85 °C, Minimum Operating Supply Voltage: 1.71 V, Minimum Operating Temperature: -40 °C

GBP 8.69

1

STMicroelectronics STM32WB55CEU6, Wireless System On Chip SOC 48-Pin UFQFPN

STMicroelectronics STM32WB55CEU6, Wireless System On Chip SOC 48-Pin UFQFPN, Processing Unit: Bluetooth, Mounting Type: Surface Mount, Dimensions: 7.1 x 7.1 x 0.55mm, Length: 7.1mm, Maximum Operating Supply Voltage: 3.6 V, Maximum Operating Temperature: +85 °C, Minimum Operating Supply Voltage: 1.71 V, Minimum Operating Temperature: -40 °C

GBP 5.23

1

STMicroelectronics STM32WB55RGV6, Wireless System On Chip SOC 68-Pin VFQFPN

STMicroelectronics STM32WB55RGV6, Wireless System On Chip SOC 68-Pin VFQFPN, Processing Unit: Bluetooth, Mounting Type: Surface Mount, Dimensions: 8.15 x 8.15 x 0.95mm, Length: 8.15mm, Maximum Operating Supply Voltage: 3.6 V, Maximum Operating Temperature: +85 °C, Minimum Operating Supply Voltage: 1.71 V, Minimum Operating Temperature: -40 °C

GBP 8.17

1

STMicroelectronics STM32WB55CEU6, Wireless System On Chip SOC 48-Pin UFQFPN

STMicroelectronics STM32WB55CEU6, Wireless System On Chip SOC 48-Pin UFQFPN, Processing Unit: Bluetooth, Mounting Type: Surface Mount, Dimensions: 7.1 x 7.1 x 0.55mm, Length: 7.1mm, Maximum Operating Supply Voltage: 3.6 V, Maximum Operating Temperature: +85 °C, Minimum Operating Supply Voltage: 1.71 V, Minimum Operating Temperature: -40 °C

GBP 7.37

1

STMicroelectronics STM32WB55CEU6, Wireless System On Chip SOC 48-Pin UFQFPN

STMicroelectronics STM32WB55CEU6, Wireless System On Chip SOC 48-Pin UFQFPN, Processing Unit: Bluetooth, Mounting Type: Surface Mount, Dimensions: 7.1 x 7.1 x 0.55mm, Length: 7.1mm, Maximum Operating Supply Voltage: 3.6 V, Maximum Operating Temperature: +85 °C, Minimum Operating Supply Voltage: 1.71 V, Minimum Operating Temperature: -40 °C

GBP 6.92

1

STMicroelectronics STM32WB55RGV6, Wireless System On Chip SOC 68-Pin VFQFPN

STMicroelectronics STM32WB55RGV6, Wireless System On Chip SOC 68-Pin VFQFPN, Processing Unit: Bluetooth, Mounting Type: Surface Mount, Dimensions: 8.15 x 8.15 x 0.95mm, Length: 8.15mm, Maximum Operating Supply Voltage: 3.6 V, Maximum Operating Temperature: +85 °C, Minimum Operating Supply Voltage: 1.71 V, Minimum Operating Temperature: -40 °C

GBP 6.21

1

STMicroelectronics BLUENRG-355AT, 32 bit ARM Cortex M0 Bluetooth System On Chip SOC 48-Pin QFN48

STMicroelectronics BLUENRG-355AT, 32 bit ARM Cortex M0 Bluetooth System On Chip SOC 48-Pin QFN48, Processing Unit: Wireless Audio Microcontroller, Mounting Type: Surface Mount

GBP 4.52

1

STMicroelectronics N-Channel MOSFET, 72 A, 650 V, 4-Pin TO247-4 STW68N65DM6-4AG

STMicroelectronics N-Channel MOSFET, 72 A, 650 V, 4-Pin TO247-4 STW68N65DM6-4AG, Maximum Drain Source Resistance: 39 mΩ, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 7.53

1

STMicroelectronics N-Channel MOSFET, 48 A, 650 V, 3-Pin TO-247 STWA68N65DM6

STMicroelectronics N-Channel MOSFET, 48 A, 650 V, 3-Pin TO-247 STWA68N65DM6, Maximum Drain Source Resistance: 0.059 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 6.83

1

STMicroelectronics N-Channel MOSFET, 48 A, 650 V, 3-Pin TO-247 STWA68N65DM6

STMicroelectronics N-Channel MOSFET, 48 A, 650 V, 3-Pin TO-247 STWA68N65DM6, Maximum Drain Source Resistance: 0.059 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 8.64

1

STMicroelectronics SiC N-Channel MOSFET Module, 38 A, 600 V Depletion, 3-Pin TO-247 STWA65N60DM6

STMicroelectronics SiC N-Channel MOSFET Module, 38 A, 600 V Depletion, 3-Pin TO-247 STWA65N60DM6, Maximum Drain Source Resistance: 0.06 Ω, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 5.95

1

STMicroelectronics SiC N-Channel MOSFET Module, 30 A, 600 V Depletion, 3-Pin TO-220FP STF36N60M6

STMicroelectronics SiC N-Channel MOSFET Module, 30 A, 600 V Depletion, 3-Pin TO-220FP STF36N60M6, Maximum Drain Source Resistance: 0.085 Ω, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 5.13

1

STMicroelectronics SiC N-Channel MOSFET Module, 52 A, 600 V Depletion, 3-Pin TO-247 STWA67N60M6

STMicroelectronics SiC N-Channel MOSFET Module, 52 A, 600 V Depletion, 3-Pin TO-247 STWA67N60M6, Maximum Drain Source Resistance: 0.045 Ω, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 8.18

1

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6, Maximum Drain Source Resistance: 0.036 Ω, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 7.23

1

STMicroelectronics SiC N-Channel MOSFET Module, 38 A, 600 V Depletion, 3-Pin TO-247 STWA65N60DM6

STMicroelectronics SiC N-Channel MOSFET Module, 38 A, 600 V Depletion, 3-Pin TO-247 STWA65N60DM6, Maximum Drain Source Resistance: 0.06 Ω, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 6.91

1

STMicroelectronics SiC N-Channel MOSFET Module, 52 A, 600 V Depletion, 3-Pin TO-247 STWA67N60M6

STMicroelectronics SiC N-Channel MOSFET Module, 52 A, 600 V Depletion, 3-Pin TO-247 STWA67N60M6, Maximum Drain Source Resistance: 0.045 Ω, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 4.83

1

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220, Maximum Drain Source Resistance: 59 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 25V, Number of Elements per Chip: 1, Series: STO67N60DM6

GBP 6.40

1

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6-4

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6-4, Maximum Drain Source Resistance: 0.036 Ω, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 7.68

1

STMicroelectronics N-Channel MOSFET, 34 A, 600 V, 8-Pin TO-LL-HV

STMicroelectronics N-Channel MOSFET, 34 A, 600 V, 8-Pin TO-LL-HV, Maximum Drain Source Resistance: 54 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1, Series: STO67N60M6

GBP 5.90

1

STMicroelectronics N-Channel MOSFET, 36 A, 600 V, 8-Pin TO-LL-HV

STMicroelectronics N-Channel MOSFET, 36 A, 600 V, 8-Pin TO-LL-HV, Maximum Drain Source Resistance: 80 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1, Series: STP50N60DM6

GBP 4.88

1

STMicroelectronics SiC N-Channel MOSFET, 45 A, 650 V, 7-Pin H²PAK-7 SCTH35N65G2V-7

STMicroelectronics SiC N-Channel MOSFET, 45 A, 650 V, 7-Pin H²PAK-7 SCTH35N65G2V-7, Maximum Drain Source Resistance: 0.055 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.2V, Number of Elements per Chip: 1

GBP 7.60

1

STMicroelectronics M41T11MH6F, Real Time Clock (RTC), 64B RAM Serial-I2C, 28-Pin SOH

STMicroelectronics M41T11MH6F, Real Time Clock (RTC), 64B RAM Serial-I2C, 28-Pin SOH, Functions: Calendar, Chip Deselect, Switch Over, Date Format: DW:DM:M:Y, Time Format: HH:MM:SS, Mounting Type: Surface Mount, Dimensions: 18.49 x 8.89 x 2.69mm, Length: 18.49mm, Width: 8.89mm, Maximum Operating Supply Voltage: 5.5 V, Maximum Operating Temperature: +85 °C, Minimum Operating Supply Voltage: 2 V

GBP 4.49

1

STMicroelectronics M41T11MH6F, Real Time Clock (RTC), 64B RAM Serial-I2C, 28-Pin SOH

STMicroelectronics M41T11MH6F, Real Time Clock (RTC), 64B RAM Serial-I2C, 28-Pin SOH, Functions: Calendar, Chip Deselect, Switch Over, Date Format: DW:DM:M:Y, Time Format: HH:MM:SS, Mounting Type: Surface Mount, Dimensions: 18.49 x 8.89 x 2.69mm, Length: 18.49mm, Width: 8.89mm, Maximum Operating Supply Voltage: 5.5 V, Maximum Operating Temperature: +85 °C, Minimum Operating Supply Voltage: 2 V

GBP 5.28

1

STMicroelectronics N-Channel MOSFET, 40 A, 600 V, 3-Pin TO-247 STW48N60DM2

STMicroelectronics N-Channel MOSFET, 40 A, 600 V, 3-Pin TO-247 STW48N60DM2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 79 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.6V

GBP 7.74

1

STMicroelectronics N-Channel MOSFET, 66 A, 600 V, 3-Pin TO-247 STW70N60DM2

STMicroelectronics N-Channel MOSFET, 66 A, 600 V, 3-Pin TO-247 STW70N60DM2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 42 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 446 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.6V

GBP 8.34

1

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STMicroelectronics STM32WB55RGV6, Wireless System On Chip SOC 68-Pin VFQFPN

STMicroelectronics STM32WB55CEU6, Wireless System On Chip SOC 48-Pin UFQFPN

STMicroelectronics STM32WB55RGV6, Wireless System On Chip SOC 68-Pin VFQFPN

STMicroelectronics STM32WB55CEU6, Wireless System On Chip SOC 48-Pin UFQFPN

STMicroelectronics STM32WB55CEU6, Wireless System On Chip SOC 48-Pin UFQFPN

STMicroelectronics STM32WB55RGV6, Wireless System On Chip SOC 68-Pin VFQFPN

STMicroelectronics BLUENRG-355AT, 32 bit ARM Cortex M0 Bluetooth System On Chip SOC 48-Pin QFN48

STMicroelectronics N-Channel MOSFET, 72 A, 650 V, 4-Pin TO247-4 STW68N65DM6-4AG

STMicroelectronics N-Channel MOSFET, 48 A, 650 V, 3-Pin TO-247 STWA68N65DM6

STMicroelectronics N-Channel MOSFET, 48 A, 650 V, 3-Pin TO-247 STWA68N65DM6

STMicroelectronics SiC N-Channel MOSFET Module, 38 A, 600 V Depletion, 3-Pin TO-247 STWA65N60DM6

STMicroelectronics SiC N-Channel MOSFET Module, 30 A, 600 V Depletion, 3-Pin TO-220FP STF36N60M6

STMicroelectronics SiC N-Channel MOSFET Module, 52 A, 600 V Depletion, 3-Pin TO-247 STWA67N60M6

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6

STMicroelectronics SiC N-Channel MOSFET Module, 38 A, 600 V Depletion, 3-Pin TO-247 STWA65N60DM6

STMicroelectronics SiC N-Channel MOSFET Module, 52 A, 600 V Depletion, 3-Pin TO-247 STWA67N60M6

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6-4

STMicroelectronics N-Channel MOSFET, 34 A, 600 V, 8-Pin TO-LL-HV

STMicroelectronics N-Channel MOSFET, 36 A, 600 V, 8-Pin TO-LL-HV

STMicroelectronics SiC N-Channel MOSFET, 45 A, 650 V, 7-Pin H²PAK-7 SCTH35N65G2V-7

STMicroelectronics M41T11MH6F, Real Time Clock (RTC), 64B RAM Serial-I2C, 28-Pin SOH

STMicroelectronics M41T11MH6F, Real Time Clock (RTC), 64B RAM Serial-I2C, 28-Pin SOH

STMicroelectronics N-Channel MOSFET, 40 A, 600 V, 3-Pin TO-247 STW48N60DM2

STMicroelectronics N-Channel MOSFET, 66 A, 600 V, 3-Pin TO-247 STW70N60DM2

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