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Infineon FS820R08A6P2BBPSA1 IGBT Module, 820 A 750 V, 20-Pin HYBRID

Infineon FS820R08A6P2BBPSA1 IGBT Module, 820 A 750 V, 20-Pin HYBRID, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Transistor Configuration: Six Pack

GBP 505.23

Infineon FS820R08A6P2BBPSA1 IGBT Module, 820 A 750 V, 20-Pin HYBRID

Infineon FS820R08A6P2BBPSA1 IGBT Module, 820 A 750 V, 20-Pin HYBRID, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Transistor Configuration: Six Pack

GBP 537.31

Infineon FS100R12W2T7B11BOMA1 IGBT Module, 100 A 1200 V EASY2B

Infineon FS100R12W2T7B11BOMA1 IGBT Module, 100 A 1200 V EASY2B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Number of Transistors: 6, Transistor Configuration: Six Pack

GBP 54.51

Infineon FS100R12W2T7B11BOMA1 IGBT Module, 100 A 1200 V EASY2B

Infineon FS100R12W2T7B11BOMA1 IGBT Module, 100 A 1200 V EASY2B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Number of Transistors: 6, Transistor Configuration: Six Pack

GBP 60.77

Infineon FS200R12PT4PBOSA1 IGBT Module, 200 A 1200 V, 20-Pin ECONO4

Infineon FS200R12PT4PBOSA1 IGBT Module, 200 A 1200 V, 20-Pin ECONO4, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Number of Transistors: 6, Transistor Configuration: Six Pack

GBP 272.88

Infineon FS200R12PT4PBOSA1 IGBT Module, 200 A 1200 V, 20-Pin ECONO4

Infineon FS200R12PT4PBOSA1 IGBT Module, 200 A 1200 V, 20-Pin ECONO4, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Number of Transistors: 6, Transistor Configuration: Six Pack

GBP 224.71