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onsemi NCS20072DR2G, High Speed, Op Amp, RRO, 3.2MHz, 2.7 → 36 V, 8-Pin SOIC

onsemi NCS20072DR2G, High Speed, Op Amp, RRO, 3.2MHz, 2.7 → 36 V, 8-Pin SOIC, Mounting Type: Surface Mount, Power Supply Type: Dual, Single, Typical Dual Supply Voltage: ±1.35 → ±18V, Typical Slew Rate: 2.8V/µs, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, Dimensions: 5 x 4 x 1.5mm, Input Offset Current: 1000pA

GBP 0.38

1

onsemi NCS20072DR2G, High Speed, Op Amp, RRO, 3.2MHz, 2.7 → 36 V, 8-Pin SOIC

onsemi NCS20072DR2G, High Speed, Op Amp, RRO, 3.2MHz, 2.7 → 36 V, 8-Pin SOIC, Mounting Type: Surface Mount, Power Supply Type: Dual, Single, Typical Dual Supply Voltage: ±1.35 → ±18V, Typical Slew Rate: 2.8V/µs, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, Dimensions: 5 x 4 x 1.5mm, Input Offset Current: 1000pA

GBP 0.26

1

onsemi NCS20072DR2G, High Speed, Op Amp, RRO, 3.2MHz, 2.7 → 36 V, 8-Pin SOIC

onsemi NCS20072DR2G, High Speed, Op Amp, RRO, 3.2MHz, 2.7 → 36 V, 8-Pin SOIC, Mounting Type: Surface Mount, Power Supply Type: Dual, Single, Typical Dual Supply Voltage: ±1.35 → ±18V, Typical Slew Rate: 2.8V/µs, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, Dimensions: 5 x 4 x 1.5mm, Input Offset Current: 1000pA

GBP 0.59

1

onsemi NCS20072DTBR2G, High Speed, Op Amp, RRO, 3.2MHz, 2.7 → 36 V, 8-Pin TSSOP

onsemi NCS20072DTBR2G, High Speed, Op Amp, RRO, 3.2MHz, 2.7 → 36 V, 8-Pin TSSOP, Mounting Type: Surface Mount, Power Supply Type: Dual, Single, Number of Channels per Chip: 1, Typical Dual Supply Voltage: ±1.35 → ±18V, Typical Slew Rate: 2.8V/µs, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, Dimensions: 3.1 x 4.5 x 1.1mm, Input Offset Current: 1000pA

GBP 0.68

1

onsemi NCS20072DTBR2G, High Speed, Op Amp, RRO, 3.2MHz, 2.7 → 36 V, 8-Pin TSSOP

onsemi NCS20072DTBR2G, High Speed, Op Amp, RRO, 3.2MHz, 2.7 → 36 V, 8-Pin TSSOP, Mounting Type: Surface Mount, Power Supply Type: Dual, Single, Number of Channels per Chip: 1, Typical Dual Supply Voltage: ±1.35 → ±18V, Typical Slew Rate: 2.8V/µs, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, Dimensions: 3.1 x 4.5 x 1.1mm, Input Offset Current: 1000pA

GBP 0.32

1

onsemi NCS20072DTBR2G, High Speed, Op Amp, RRO, 3.2MHz, 2.7 → 36 V, 8-Pin TSSOP

onsemi NCS20072DTBR2G, High Speed, Op Amp, RRO, 3.2MHz, 2.7 → 36 V, 8-Pin TSSOP, Mounting Type: Surface Mount, Power Supply Type: Dual, Single, Number of Channels per Chip: 1, Typical Dual Supply Voltage: ±1.35 → ±18V, Typical Slew Rate: 2.8V/µs, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, Dimensions: 3.1 x 4.5 x 1.1mm, Input Offset Current: 1000pA

GBP 0.47

1

onsemi FSBF5CH60B IGBT Module, 5 A 600 V, 27-Pin SPM27 JA, Through Hole

onsemi FSBF5CH60B IGBT Module, 5 A 600 V, 27-Pin SPM27 JA, Through Hole, Maximum Power Dissipation: 19 W, Switching Speed: 20kHz, Dimensions: 44 x 26.8 x 5.5mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 26.8mm

GBP 16.46

1

onsemi FSBB30CH60C IGBT Module, 30 A 600 V, 27-Pin SPM27 EC, Through Hole

onsemi FSBB30CH60C IGBT Module, 30 A 600 V, 27-Pin SPM27 EC, Through Hole, Maximum Power Dissipation: 106 W, Switching Speed: 20kHz, Dimensions: 44 x 26.8 x 5.5mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 26.8mm

GBP 16.68

1

onsemi FPDB40PH60B IGBT Module, 40 A 600 V, 27-Pin SPM27 GC, Through Hole

onsemi FPDB40PH60B IGBT Module, 40 A 600 V, 27-Pin SPM27 GC, Through Hole, Maximum Power Dissipation: 113 W, Switching Speed: 20kHz, Dimensions: 44 x 26.8 x 5.5mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 26.8mm

GBP 16.70

1

onsemi FSBF15CH60BT IGBT Module, 15 A 600 V, 27-Pin SPM27 JA, Through Hole

onsemi FSBF15CH60BT IGBT Module, 15 A 600 V, 27-Pin SPM27 JA, Through Hole, Maximum Power Dissipation: 25 W, Switching Speed: 20kHz, Dimensions: 44 x 26.8 x 5.5mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 26.8mm

GBP 17.20

1

onsemi FSBF5CH60B IGBT Module, 5 A 600 V, 27-Pin SPM27 JA, Through Hole

onsemi FSBF5CH60B IGBT Module, 5 A 600 V, 27-Pin SPM27 JA, Through Hole, Maximum Power Dissipation: 19 W, Switching Speed: 20kHz, Dimensions: 44 x 26.8 x 5.5mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 26.8mm

GBP 14.50

1

onsemi FPDB40PH60B IGBT Module, 40 A 600 V, 27-Pin SPM27 GC, Through Hole

onsemi FPDB40PH60B IGBT Module, 40 A 600 V, 27-Pin SPM27 GC, Through Hole, Maximum Power Dissipation: 113 W, Switching Speed: 20kHz, Dimensions: 44 x 26.8 x 5.5mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 26.8mm

GBP 14.70

1

onsemi FSBB30CH60C IGBT Module, 30 A 600 V, 27-Pin SPM27 EC, Through Hole

onsemi FSBB30CH60C IGBT Module, 30 A 600 V, 27-Pin SPM27 EC, Through Hole, Maximum Power Dissipation: 106 W, Switching Speed: 20kHz, Dimensions: 44 x 26.8 x 5.5mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 26.8mm

GBP 15.34

1

onsemi FSBF15CH60BT IGBT Module, 15 A 600 V, 27-Pin SPM27 JA, Through Hole

onsemi FSBF15CH60BT IGBT Module, 15 A 600 V, 27-Pin SPM27 JA, Through Hole, Maximum Power Dissipation: 25 W, Switching Speed: 20kHz, Dimensions: 44 x 26.8 x 5.5mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 26.8mm

GBP 14.30

1

onsemi FPDB40PH60B IGBT Module, 40 A 600 V, 27-Pin SPM27 GC, Through Hole

onsemi FPDB40PH60B IGBT Module, 40 A 600 V, 27-Pin SPM27 GC, Through Hole, Switching Speed: 20kHz, Maximum Power Dissipation: 113 W, Dimensions: 44 x 26.8 x 5.5mm, Length: 44mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 26.8mm

GBP 15.35

1

onsemi FSBF15CH60BT IGBT Module, 15 A 600 V, 27-Pin SPM27 JA, Through Hole

onsemi FSBF15CH60BT IGBT Module, 15 A 600 V, 27-Pin SPM27 JA, Through Hole, Switching Speed: 20kHz, Maximum Power Dissipation: 25 W, Dimensions: 44 x 26.8 x 5.5mm, Length: 44mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 26.8mm

GBP 16.86

1

onsemi FSBF5CH60B IGBT Module, 5 A 600 V, 27-Pin SPM27 JA, Through Hole

onsemi FSBF5CH60B IGBT Module, 5 A 600 V, 27-Pin SPM27 JA, Through Hole, Switching Speed: 20kHz, Maximum Power Dissipation: 19 W, Dimensions: 44 x 26.8 x 5.5mm, Length: 44mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 26.8mm

GBP 16.46

1

onsemi FSBB30CH60C IGBT Module, 30 A 600 V, 27-Pin SPM27 EC, Through Hole

onsemi FSBB30CH60C IGBT Module, 30 A 600 V, 27-Pin SPM27 EC, Through Hole, Switching Speed: 20kHz, Maximum Power Dissipation: 106 W, Dimensions: 44 x 26.8 x 5.5mm, Length: 44mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 26.8mm

GBP 14.82

1

onsemi FGH75T65SHDTL4, P-Channel IGBT, 150 A 650 V, 4-Pin TO-247, Through Hole

onsemi FGH75T65SHDTL4, P-Channel IGBT, 150 A 650 V, 4-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 455 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.8mm, Width: 5.2mm, Height: 22.74mm, Dimensions: 15.8 x 5.2 x 22.74mm

GBP 5.41

1

onsemi NGTB20N120IHRWG IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole

onsemi NGTB20N120IHRWG IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 384 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 16.25 x 5.3 x 21.4mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 4.06

1

onsemi FGAF20N60SMD IGBT, 40 A 600 V, 3-Pin TO-3PF, Through Hole

onsemi FGAF20N60SMD IGBT, 40 A 600 V, 3-Pin TO-3PF, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 75 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.7 x 3.2 x 26.7mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 1.12

1

onsemi FGH40T65UPD IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

onsemi FGH40T65UPD IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 268 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.87 x 4.82 x 20.82mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 2.29

1

onsemi FGAF40N60SMD IGBT, 80 A 600 V, 3-Pin TO-3PF, Through Hole

onsemi FGAF40N60SMD IGBT, 80 A 600 V, 3-Pin TO-3PF, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 115 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.7 x 3.2 x 26.7mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 3.83

1

onsemi NGTB25N120FL3WG IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole

onsemi NGTB25N120FL3WG IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 349 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 16.25mm, Width: 5.3mm, Height: 21.4mm, Dimensions: 16.25 x 5.3 x 21.4mm, Gate Capacitance: 3085pF

GBP 4.03

1

onsemi NGTG30N60FLWG IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

onsemi NGTG30N60FLWG IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 250 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 16.25 x 5.3 x 21.4mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 3.22

1

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Price (EUR)

onsemi NCS20072DR2G, High Speed, Op Amp, RRO, 3.2MHz, 2.7 → 36 V, 8-Pin SOIC

onsemi NCS20072DR2G, High Speed, Op Amp, RRO, 3.2MHz, 2.7 → 36 V, 8-Pin SOIC

onsemi NCS20072DR2G, High Speed, Op Amp, RRO, 3.2MHz, 2.7 → 36 V, 8-Pin SOIC

onsemi NCS20072DTBR2G, High Speed, Op Amp, RRO, 3.2MHz, 2.7 → 36 V, 8-Pin TSSOP

onsemi NCS20072DTBR2G, High Speed, Op Amp, RRO, 3.2MHz, 2.7 → 36 V, 8-Pin TSSOP

onsemi NCS20072DTBR2G, High Speed, Op Amp, RRO, 3.2MHz, 2.7 → 36 V, 8-Pin TSSOP

onsemi FSBF5CH60B IGBT Module, 5 A 600 V, 27-Pin SPM27 JA, Through Hole

onsemi FSBB30CH60C IGBT Module, 30 A 600 V, 27-Pin SPM27 EC, Through Hole

onsemi FPDB40PH60B IGBT Module, 40 A 600 V, 27-Pin SPM27 GC, Through Hole

onsemi FSBF15CH60BT IGBT Module, 15 A 600 V, 27-Pin SPM27 JA, Through Hole

onsemi FSBF5CH60B IGBT Module, 5 A 600 V, 27-Pin SPM27 JA, Through Hole

onsemi FPDB40PH60B IGBT Module, 40 A 600 V, 27-Pin SPM27 GC, Through Hole

onsemi FSBB30CH60C IGBT Module, 30 A 600 V, 27-Pin SPM27 EC, Through Hole

onsemi FSBF15CH60BT IGBT Module, 15 A 600 V, 27-Pin SPM27 JA, Through Hole

onsemi FPDB40PH60B IGBT Module, 40 A 600 V, 27-Pin SPM27 GC, Through Hole

onsemi FSBF15CH60BT IGBT Module, 15 A 600 V, 27-Pin SPM27 JA, Through Hole

onsemi FSBF5CH60B IGBT Module, 5 A 600 V, 27-Pin SPM27 JA, Through Hole

onsemi FSBB30CH60C IGBT Module, 30 A 600 V, 27-Pin SPM27 EC, Through Hole

onsemi FGH75T65SHDTL4, P-Channel IGBT, 150 A 650 V, 4-Pin TO-247, Through Hole

onsemi NGTB20N120IHRWG IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole

onsemi FGAF20N60SMD IGBT, 40 A 600 V, 3-Pin TO-3PF, Through Hole

onsemi FGH40T65UPD IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

onsemi FGAF40N60SMD IGBT, 80 A 600 V, 3-Pin TO-3PF, Through Hole

onsemi NGTB25N120FL3WG IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole

onsemi NGTG30N60FLWG IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

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